Discrete Semiconductor Products

GHXS045A120S-D3

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DIODE MODULES SIC SBD PARALLEL POWER MODULE 1200A 45A

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Discrete Semiconductor Products

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DIODE MODULES SIC SBD PARALLEL POWER MODULE 1200A 45A

Technical Specifications

Parameters and characteristics for this part

Specification	GHXS045A120S-D3

Current - Average Rectified (Io) (per Diode)	45 A
Current - Reverse Leakage @ Vr	300 µA
Diode Configuration	2 Independent
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Speed	500 ns, 200 mA
Supplier Device Package	SOT-227
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If [Max]	1.7 V

Part	Technology	Current - Average Rectified (Io) (per Diode)	Speed	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If [Max]	Diode Configuration	Current - Reverse Leakage @ Vr	Package / Case
SemiQ GHXS045A120S-D3	SiC (Silicon Carbide) Schottky	45 A	200 mA 500 ns	175 ░C	-55 °C	Chassis Mount	1.2 kV	SOT-227	1.7 V	2 Independent	300 µA	SOT-227-4 miniBLOC

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General part information

Diode Array 2 Independent 1200 V 45A Chassis Mount SOT-227-4, miniBLOC

Technical documentation and resources

No documents available