Discrete Semiconductor Products

TPC6109-H(TE85L,FM

Obsolete

MOSFET P-CH 30V 5A VS-6

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 5A VS-6

Technical Specifications

Parameters and characteristics for this part

Specification	TPC6109-H(TE85L,FM

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	12.3 nC
Input Capacitance (Ciss) (Max) @ Vds	490 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max) [Max]	700 mW
Rds On (Max) @ Id, Vgs	59 mOhm
Supplier Device Package	VS-6
Supplier Device Package [x]	2.9
Supplier Device Package [y]	2.8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.2 V

Part	Rds On (Max) @ Id, Vgs	Supplier Device Package [y]	Supplier Device Package	Supplier Device Package [x]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Operating Temperature
Toshiba Semiconductor and Storage TPC6109-H(TE85L,FM	59 mOhm	2.8	VS-6	2.9	4.5 V 10 V	20 V	P-Channel	MOSFET (Metal Oxide)	SOT-23-6 Thin TSOT-23-6	5 A	700 mW	30 V	490 pF	Surface Mount	12.3 nC	1.2 V	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

P-Channel 30 V 5A (Ta) 700mW (Ta) Surface Mount VS-6 (2.9x2.8)

Technical documentation and resources