TPC6109 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
MOSFET P-CH 30V 5A VS-6
| Part | Rds On (Max) @ Id, Vgs | Supplier Device Package [y] | Supplier Device Package | Supplier Device Package [x] | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | FET Type | Technology | Package / Case | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 59 mOhm | 2.8 | VS-6 | 2.9 | 4.5 V 10 V | 20 V | P-Channel | MOSFET (Metal Oxide) | SOT-23-6 Thin TSOT-23-6 | 5 A | 700 mW | 30 V | 490 pF | Surface Mount | 12.3 nC | 1.2 V | 150 °C |