STB20NM60T4
ActiveN-CHANNEL 600V - 0.25OHM - 20A - D2PAK MDMESH MOSFET
STB20NM60T4
ActiveN-CHANNEL 600V - 0.25OHM - 20A - D2PAK MDMESH MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | STB20NM60T4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 1500 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Power Dissipation (Max) | 192 W |
| Rds On (Max) @ Id, Vgs | 290 mOhm |
| Supplier Device Package | D2PAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.87 | |
Description
General part information
STB20NM60 Series
The MDmesh™is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Documents
Technical documentation and resources