Discrete Semiconductor Products
STD16NF06T4
ActiveSTMicroelectronics
N-CHANNEL 100V - 0.019Y - 80A - TO-220 - D2PAK - I2PAK
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Discrete Semiconductor Products
STD16NF06T4
ActiveSTMicroelectronics
N-CHANNEL 100V - 0.019Y - 80A - TO-220 - D2PAK - I2PAK
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STD16NF06T4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 16 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 14.1 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power Dissipation (Max) | 40 W |
| Rds On (Max) @ Id, Vgs | 70 mOhm |
| Supplier Device Package | DPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 17355 | $ 1.46 | |
Description
General part information
STD16NF06 Series
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Documents
Technical documentation and resources