Discrete Semiconductor Products

SI7157DP-T1-GE3

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MOSFET P-CH 20V 60A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET P-CH 20V 60A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7157DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	625 nC
Input Capacitance (Ciss) (Max) @ Vds	22000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	6.25 W, 104 W
Rds On (Max) @ Id, Vgs	1.6 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Supplier Device Package	Mounting Type	Rds On (Max) @ Id, Vgs	Package / Case	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI7157DP-T1-GE3	625 nC	-55 °C	150 °C	6.25 W 104 W	20 V	22000 pF	P-Channel	MOSFET (Metal Oxide)	10 V	2.5 V	PowerPAK® SO-8	Surface Mount	1.6 mOhm	PowerPAK® SO-8	1.4 V	60 A	12 V

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General part information

P-Channel 20 V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources