SI7157 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET P-CH 20V 60A PPAK SO-8
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Technology | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs | Package / Case | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 625 nC | -55 °C | 150 °C | 6.25 W 104 W | 20 V | 22000 pF | P-Channel | MOSFET (Metal Oxide) | 10 V | 2.5 V | PowerPAK® SO-8 | Surface Mount | 1.6 mOhm | PowerPAK® SO-8 | 1.4 V | 60 A | 12 V |