Discrete Semiconductor Products

SI7102DN-T1-E3

Obsolete

MOSFET N-CH 12V 35A PPAK 1212-8

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 12V 35A PPAK 1212-8

Technical Specifications

Parameters and characteristics for this part

Specification	SI7102DN-T1-E3

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	110 nC
Input Capacitance (Ciss) (Max) @ Vds	3720 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-50 °C
Package / Case	PowerPAK® 1212-8
Power Dissipation (Max)	52 W, 3.8 W
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	PowerPAK® 1212-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Package / Case	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Vgs (Max)	Technology	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SI7102DN-T1-E3	PowerPAK® 1212-8	Surface Mount	2.5 V 4.5 V	110 nC	N-Channel	3.8 W 52 W	3.8 mOhm	8 V	MOSFET (Metal Oxide)	1 V	35 A	150 °C	-50 °C	PowerPAK® 1212-8	3720 pF	12 V
Vishay General Semiconductor - Diodes Division SI7102DN-T1-GE3	PowerPAK® 1212-8	Surface Mount	2.5 V 4.5 V	110 nC	N-Channel	3.8 W 52 W	3.8 mOhm	8 V	MOSFET (Metal Oxide)	1 V	35 A	150 °C	-50 °C	PowerPAK® 1212-8	3720 pF	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 12 V 35A (Tc) 3.8W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

Technical documentation and resources