SI7102 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 12V 35A PPAK 1212-8
| Part | Package / Case | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs | FET Type | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Vgs (Max) | Technology | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8 | Surface Mount | 2.5 V 4.5 V | 110 nC | N-Channel | 3.8 W 52 W | 3.8 mOhm | 8 V | MOSFET (Metal Oxide) | 1 V | 35 A | 150 °C | -50 °C | PowerPAK® 1212-8 | 3720 pF | 12 V |
Vishay General Semiconductor - Diodes Division | PowerPAK® 1212-8 | Surface Mount | 2.5 V 4.5 V | 110 nC | N-Channel | 3.8 W 52 W | 3.8 mOhm | 8 V | MOSFET (Metal Oxide) | 1 V | 35 A | 150 °C | -50 °C | PowerPAK® 1212-8 | 3720 pF | 12 V |