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JANTXV2N6052
Discrete Semiconductor Products

JANTXV2N6052

Unknown
Microchip Technology

DARLINGTON PNP SILICON POWER -80V TO -100V, -12A

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JANTXV2N6052
Discrete Semiconductor Products

JANTXV2N6052

Unknown
Microchip Technology

DARLINGTON PNP SILICON POWER -80V TO -100V, -12A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTXV2N6052
Current - Collector (Ic) (Max)12 A
Current - Collector Cutoff (Max)1 mA
DC Current Gain (hFE) (Min)1000
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature (Max)175 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-3, TO-204AA
Package NameTO-3
Power - Max150 W
Qualification501, MIL-PRF-19500
Transistor TypePNP, Darlington
Vce Saturation (Max)3 V
Voltage - Collector Emitter Breakdown (Max)100 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$Updated
DigikeyBulk 100$ 88.67<1d
Microchip DirectN/A 1$ 95.4930d+
NewarkEach 100$ 88.6730d+
500$ 85.26

CAD

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Description

General part information

JANTXV2N6052-Darlington Series

This specification covers the performance requirements for PNP, Darlington, silicon, power, 2N6051 and 2N6052 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each encapsulated device as specified in MIL-PRF-19500/501.

Documents

Technical documentation and resources