Discrete Semiconductor Products

STL8DN10LF3

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AUTOMOTIVE-GRADE DUAL N-CHANNEL 100 V, 25 MOHM TYP., 7.8 A STRIPFET F3 POWER MOSFET IN POWERFLAT 5X6 DOUBLE ISLAND PACKAGE

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DocumentsSTL8DN10LF3 | Datasheet +16

Discrete Semiconductor Products

STL8DN10LF3

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STMicroelectronics

AUTOMOTIVE-GRADE DUAL N-CHANNEL 100 V, 25 MOHM TYP., 7.8 A STRIPFET F3 POWER MOSFET IN POWERFLAT 5X6 DOUBLE ISLAND PACKAGE

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DocumentsSTL8DN10LF3 | Datasheet +16

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STL8DN10LF3

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	100 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	20.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	970 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power - Max [Max]	70 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	35 mOhm
Supplier Device Package	PowerFlat™ (5x6)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

STL8DN10LF3 Series

Automotive-grade dual N-channel 100 V, 25 mOhm typ., 7.8 A STripFET F3 Power MOSFET in PowerFLAT 5x6 double island package

Part	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Configuration	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Grade	Package / Case	Power - Max [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Qualification	FET Feature
STMicroelectronics STL8DN10LF3	Surface Mount	970 pF	20 A	100 V	2 N-Channel (Dual)	PowerFlat™ (5x6)	35 mOhm	3 V	MOSFET (Metal Oxide)	20.5 nC	Automotive	8-PowerVDFN	70 W	175 °C	-55 °C	AEC-Q101	Logic Level Gate

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	309	$ 2.68
Newark	Each	1	$ 3.16
		10	$ 2.27
		100	$ 1.73
		500	$ 1.49
		1000	$ 1.41
		2500	$ 1.37
		6000	$ 1.33

Description

General part information

STL8DN10LF3 Series

This device is an N-channel Power MOSFET developed using STripFET™ F3 technology. It is designed to minimize on-resistance and gate charge to provide superior switching performance.