Discrete Semiconductor Products

SIHD12N50E-GE3

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MOSFET N-CH 550V 10.5A DPAK

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Discrete Semiconductor Products

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MOSFET N-CH 550V 10.5A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHD12N50E-GE3

Current - Continuous Drain (Id) @ 25°C	10.5 A
Drain to Source Voltage (Vdss)	550 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	50 nC
Input Capacitance (Ciss) (Max) @ Vds	886 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	114 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Supplier Device Package	Power Dissipation (Max) [Max]	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)
Vishay General Semiconductor - Diodes Division SIHD12N50E-GE3	10 V	Surface Mount	380 mOhm	4 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	MOSFET (Metal Oxide)	886 pF	-55 °C	150 °C	10.5 A	550 V	DPAK	114 W	N-Channel	50 nC	30 V

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General part information

N-Channel 550 V 10.5A (Tc) 114W (Tc) Surface Mount DPAK

Technical documentation and resources