SIHD12 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 550V 10.5A DPAK
| Part | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Package / Case | Technology | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Supplier Device Package | Power Dissipation (Max) [Max] | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 10 V | Surface Mount | 380 mOhm | 4 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 | MOSFET (Metal Oxide) | 886 pF | -55 °C | 150 °C | 10.5 A | 550 V | DPAK | 114 W | N-Channel | 50 nC | 30 V |