Discrete Semiconductor Products

IRFIBF20GPBF

Active

MOSFET N-CH 900V 1.2A TO220-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Active

MOSFET N-CH 900V 1.2A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	IRFIBF20GPBF

Current - Continuous Drain (Id) @ 25°C	1.2 A
Drain to Source Voltage (Vdss)	900 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack, Isolated Tab
Rds On (Max) @ Id, Vgs	8 Ohm
Supplier Device Package	TO-220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Supplier Device Package	Vgs (Max)	Technology	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division IRFIBF20GPBF	-55 °C	150 °C	N-Channel	TO-220-3	20 V	MOSFET (Metal Oxide)	Through Hole	38 nC	8 Ohm	4 V	TO-220-3 Full Pack Isolated Tab	10 V	1.2 A	900 V
Vishay General Semiconductor - Diodes Division IRFIBF20G	-55 °C	150 °C	N-Channel	TO-220-3	20 V	MOSFET (Metal Oxide)	Through Hole	38 nC	8 Ohm	4 V	TO-220-3 Full Pack Isolated Tab	10 V	1.2 A	900 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 900 V 1.2A (Tc) 30W (Tc) Through Hole TO-220-3

Technical documentation and resources