IRFIBF20 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 900V 1.2A TO220-3
| Part | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Supplier Device Package | Vgs (Max) | Technology | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | N-Channel | TO-220-3 | 20 V | MOSFET (Metal Oxide) | Through Hole | 38 nC | 8 Ohm | 4 V | TO-220-3 Full Pack Isolated Tab | 10 V | 1.2 A | 900 V |
Vishay General Semiconductor - Diodes Division | -55 °C | 150 °C | N-Channel | TO-220-3 | 20 V | MOSFET (Metal Oxide) | Through Hole | 38 nC | 8 Ohm | 4 V | TO-220-3 Full Pack Isolated Tab | 10 V | 1.2 A | 900 V |