FGA20N120FTDTU

Obsolete

ON Semiconductor

IGBT, 1200V, 20A, FIELD STOP TRENCH

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DocumentsPackage Drawing-340BZ-TO-3P-3LD / EIAJ SC-65, ISOLATED Datasheet

Discrete Semiconductor Products

FGA20N120FTDTU

Obsolete

ON Semiconductor

IGBT, 1200V, 20A, FIELD STOP TRENCH

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DocumentsPackage Drawing-340BZ-TO-3P-3LD / EIAJ SC-65, ISOLATED Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FGA20N120FTDTU

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Pulsed (Icm)	60 A
Gate Charge	137 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	298 W
Reverse Recovery Time (trr)	447 ns
Supplier Device Package	TO-3P
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1200 V

FGA20N120FTD Series

IGBT, 1200V, 20A, Field Stop Trench

Part	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Gate Charge	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Package / Case	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)	IGBT Type
ON Semiconductor FGA20N120FTDTU	40 A	-55 °C	150 °C	298 W	137 nC	2 V	60 A	SC-65-3 TO-3P-3	TO-3P	Through Hole	1200 V	447 ns	Trench Field Stop

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

FGA20N120FTD Series

Using advanced field stop trench technology, ON Semiconductor’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven.