FGA20N120FTD Series

IGBT, 1200V, 20A, Field Stop Trench

Catalog

IGBT, 1200V, 20A, Field Stop Trench

Part	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Gate Charge	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Package / Case	Supplier Device Package	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Reverse Recovery Time (trr)	IGBT Type
ON Semiconductor FGA20N120FTDTU	40 A	-55 °C	150 °C	298 W	137 nC	2 V	60 A	SC-65-3 TO-3P-3	TO-3P	Through Hole	1200 V	447 ns	Trench Field Stop

Catalog

IGBT, 1200V, 20A, Field Stop Trench

Key Features

• Field stop trench technology

• High speed switching

• Low saturation voltage: VCE(sat)=1.6V @ IC= 20A

• High input impedance

• RoHS compliant

Description

Using advanced field stop trench technology, ON Semiconductor’s 1200V trench IGBTs offer superior conduction and switching performances for soft switching applications. The device can operate in parallel configuration with exceptional avalanche ruggedness. This device is designed for induction heating and microwave oven.