Discrete Semiconductor Products

STFI15N60M2-EP

Obsolete

MOSFET N-CH 600V 11A I2PAKFP

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 600V 11A I2PAKFP

Technical Specifications

Parameters and characteristics for this part

Specification	STFI15N60M2-EP

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	590 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262-3 Full Pack, I2PAK
Power Dissipation (Max)	25 W
Rds On (Max) @ Id, Vgs	378 mOhm
Supplier Device Package	I2PAKFP (TO-281)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	FET Type	Drain to Source Voltage (Vdss)	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]
STMicroelectronics STFI15N60M2-EP	4 V	N-Channel	600 V	MOSFET (Metal Oxide)	590 pF	I2PAKFP (TO-281)	TO-262-3 Full Pack I2PAK	17 nC	25 W	Through Hole	11 A	10 V	25 V	378 mOhm	150 °C	-55 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET N-CH 600V 11A I2PAKFP

Technical documentation and resources