Discrete Semiconductor Products

MUR20010CTR

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DIODE MODULE GP 100V 100A 2TOWER

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Discrete Semiconductor Products

Active

DIODE MODULE GP 100V 100A 2TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MUR20010CTR

Current - Average Rectified (Io) (per Diode)	100 A
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Twin Tower
Reverse Recovery Time (trr)	75 ns
Speed	500 ns, 200 mA
Supplier Device Package	Twin Tower
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.3 V

Part	Speed	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Diode Configuration	Voltage - Forward (Vf) (Max) @ If [Max]	Reverse Recovery Time (trr)	Package / Case	Technology	Supplier Device Package
GeneSiC Semiconductor MUR20010CTR	200 mA 500 ns	100 V	100 A	-55 °C	150 °C	Chassis Mount	1 Pair Common Anode	1.3 V	75 ns	Twin Tower	Standard	Twin Tower
GeneSiC Semiconductor MUR20010CT	200 mA 500 ns	100 V	100 A	-55 °C	150 °C	Chassis Mount	1 Pair Common Cathode	1.3 V	75 ns	Twin Tower	Standard	Twin Tower

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Anode 100 V 100A Chassis Mount Twin Tower

Technical documentation and resources