MUR20010 Series
Manufacturer: GeneSiC Semiconductor
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DIODE MODULE GP 100V 100A 2TOWER
| Part | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) (per Diode) | Operating Temperature - Junction [Min] | Operating Temperature - Junction [Max] | Mounting Type | Diode Configuration | Voltage - Forward (Vf) (Max) @ If [Max] | Reverse Recovery Time (trr) | Package / Case | Technology | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 GeneSiC Semiconductor | 200 mA 500 ns | 100 V | 100 A | -55 °C | 150 °C | Chassis Mount | 1 Pair Common Anode | 1.3 V | 75 ns | Twin Tower | Standard | Twin Tower |
 GeneSiC Semiconductor | 200 mA 500 ns | 100 V | 100 A | -55 °C | 150 °C | Chassis Mount | 1 Pair Common Cathode | 1.3 V | 75 ns | Twin Tower | Standard | Twin Tower |