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Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | PMN50EPEX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.6 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 20 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 793 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-457, SC-74 |
| Power Dissipation (Max) | 6.25 mW, 560 mW |
| Rds On (Max) @ Id, Vgs | 45 mOhm |
| Supplier Device Package | 6-TSOP |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1960 | $ 1.02 | |
Description
General part information
PMN50EPE Series
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Documents
Technical documentation and resources