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30 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | FET Type | Supplier Device Package | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Technology | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Drain to Source Voltage (Vdss) | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs (Max) | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | P-Channel | 6-TSOP | 6.25 mW 560 mW | 3 V | MOSFET (Metal Oxide) | 4.6 A | 793 pF | 20 nC | SC-74 SOT-457 | 30 V | 150 °C | 4.5 V 10 V | Surface Mount | 20 V | 45 mOhm |