Discrete Semiconductor Products

MCG50P03-TP

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P-CHANNEL MOSFET,DFN3333

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Discrete Semiconductor Products

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P-CHANNEL MOSFET,DFN3333

Technical Specifications

Parameters and characteristics for this part

Specification	MCG50P03-TP

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	111.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	6464 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-VDFN Exposed Pad
Power Dissipation (Max) [Max]	83 W
Rds On (Max) @ Id, Vgs	6.2 mOhm
Supplier Device Package	DFN3333
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	2.8 V

Part	Technology	Supplier Device Package	Package / Case	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)
Micro Commercial Components MCG50P03-TP	MOSFET (Metal Oxide)	DFN3333	8-VDFN Exposed Pad	83 W	6.2 mOhm	6464 pF	P-Channel	-55 °C	150 °C	30 V	50 A	2.8 V	Surface Mount	111.7 nC	4.5 V 10 V	25 V

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General part information

P-Channel 30 V 50A 83W Surface Mount DFN3333

Technical documentation and resources