Specification	SSM3J66MFV,L3XHF

Current - Continuous Drain (Id) @ 25°C	800 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	1.2 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	1.6 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	100 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-723
Power Dissipation (Max) [Max]	150 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs [Max]	390 mOhm
Supplier Device Package	VESM
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	6 V, -8 V
Vgs(th) (Max) @ Id	1 V

SSM3J66MFV Series

Part	Current - Continuous Drain (Id) @ 25°C	Grade	Qualification	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max) [Max]	Package / Case	Operating Temperature	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Vgs (Max) [Max]	FET Type
Toshiba Semiconductor and Storage SSM3J66MFV,L3XHF	800 mA	Automotive	AEC-Q101	1.6 nC	1.2 V	4.5 V	100 pF	Surface Mount	150 mW	SOT-723	150 °C	VESM	390 mOhm	1 V	20 V	MOSFET (Metal Oxide)	-8 V 6 V	P-Channel
Toshiba Semiconductor and Storage SSM3J66MFV,L3F	800 mA			1.6 nC	1.2 V	4.5 V	100 pF	Surface Mount	150 mW	SOT-723	150 °C	VESM	390 mOhm	1 V	20 V	MOSFET (Metal Oxide)	-8 V 6 V	P-Channel

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	7500	$ 0.34

General part information

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -0.8 A, 0.39 Ω@4.5V, SOT-723(VESM)

Technical documentation and resources