SSM3J66MFV Series

Catalog

HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, P-CH MOSFET, -20 V, -0.8 A, 0.39 Ω@4.5V, SOT-723(VESM)

Part	Current - Continuous Drain (Id) @ 25°C	Grade	Qualification	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max) [Max]	Package / Case	Operating Temperature	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Technology	Vgs (Max) [Max]	FET Type
Toshiba Semiconductor and Storage SSM3J66MFV,L3XHF	800 mA	Automotive	AEC-Q101	1.6 nC	1.2 V	4.5 V	100 pF	Surface Mount	150 mW	SOT-723	150 °C	VESM	390 mOhm	1 V	20 V	MOSFET (Metal Oxide)	-8 V 6 V	P-Channel
Toshiba Semiconductor and Storage SSM3J66MFV,L3F	800 mA			1.6 nC	1.2 V	4.5 V	100 pF	Surface Mount	150 mW	SOT-723	150 °C	VESM	390 mOhm	1 V	20 V	MOSFET (Metal Oxide)	-8 V 6 V	P-Channel