STU10NM60N
ActiveN-CHANNEL 600 V, 0.53 OHM TYP., 10 A, MDMESH II POWER MOSFET IN IPAK PACKAGE
STU10NM60N
ActiveN-CHANNEL 600 V, 0.53 OHM TYP., 10 A, MDMESH II POWER MOSFET IN IPAK PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STU10NM60N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-251-3 Short Leads, TO-251AA, IPAK |
| Power Dissipation (Max) [Max] | 70 W |
| Supplier Device Package | IPAK |
| Supplier Device Package | TO-251 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 25 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STU10NM60N Series
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.100% avalanche testedLow input capacitance and gate chargeLow gate input resistance
Documents
Technical documentation and resources