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Technical Specifications
Parameters and characteristics for this part
| Specification | PMCM6501VNEZ |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 7.3 A |
| Drain to Source Voltage (Vdss) | 12 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 24 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 920 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | WLCSP, 6-XFBGA |
| Power Dissipation (Max) | 12.5 W |
| Power Dissipation (Max) | 556 mW |
| Rds On (Max) @ Id, Vgs [Max] | 18 mOhm |
| Supplier Device Package | 6-WLCSP |
| Supplier Device Package [x] | 1.48 |
| Supplier Device Package [y] | 0.98 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | 8 V |
| Vgs(th) (Max) @ Id | 900 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 1.16 | |
| 2036138 | $ 0.50 | |||
Description
General part information
PMCM6501VNE Series
N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
Documents
Technical documentation and resources