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12 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
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12 V, N-channel Trench MOSFET
12 V, N-channel Trench MOSFET
| Part | FET Type | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs [Max] | Vgs (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Max] | Operating Temperature [Min] | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Package / Case | Supplier Device Package [y] | Supplier Device Package [x] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Power Dissipation (Max) | Technology | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | N-Channel | 900 mV | 18 mOhm | 8 V | 24 nC | 150 °C | -55 °C | 1.5 V 4.5 V | Surface Mount | 6-XFBGA WLCSP | 0.98 | 1.48 | 6-WLCSP | 920 pF | 7.3 A | 12.5 W | 556 mW | MOSFET (Metal Oxide) | 12 V |