Integrated Circuits (ICs)

IRS2112PBF

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IC, HIGH, LOW SIDE DRIVER, DIP14

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Integrated Circuits (ICs)

Active

IC, HIGH, LOW SIDE DRIVER, DIP14

Technical Specifications

Parameters and characteristics for this part

Specification	IRS2112PBF

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	600 mA
Current - Peak Output (Source, Sink) [custom]	290 mA
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT, MOSFET (N-Channel)
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	9.5 V, 6 V
Mounting Type	Through Hole
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	14-DIP
Package / Case	0.3 in
Package / Case	7.62 mm
Rise / Fall Time (Typ)	75 ns
Rise / Fall Time (Typ)	35 ns
Supplier Device Package	14-DIP
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Gate Type	Input Type	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Operating Temperature [Min]	Operating Temperature [Max]	Voltage - Supply [Max]	Voltage - Supply [Min]	High Side Voltage - Max (Bootstrap) [Max]	Package / Case	Package / Case	Package / Case	Channel Type	Logic Voltage - VIL, VIH	Rise / Fall Time (Typ)	Rise / Fall Time (Typ)	Driven Configuration	Mounting Type	Supplier Device Package	Number of Drivers
INFINEON IRS2112SPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Non-Inverting	600 mA	290 mA	-40 °C	150 °C	20 V	10 VDC	600 V	16-SOIC	7.5 mm	0.295 "	Independent	6 V 9.5 V	75 ns	35 ns	Half-Bridge	Surface Mount	16-SOIC	2
INFINEON IRS2112PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Non-Inverting	600 mA	290 mA	-40 °C	150 °C	20 V	10 VDC	600 V	14-DIP	7.62 mm	0.3 in	Independent	6 V 9.5 V	75 ns	35 ns	Half-Bridge	Through Hole	14-DIP	2
INFINEON IRS2112STRPBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Non-Inverting	600 mA	290 mA	-40 °C	150 °C	20 V	10 VDC	600 V	16-SOIC	7.5 mm	0.295 "	Independent	6 V 9.5 V	75 ns	35 ns	Half-Bridge	Surface Mount	16-SOIC	2
INFINEON IRS2112PBF	IGBT MOSFET (N-Channel) N-Channel MOSFET	Non-Inverting	600 mA	290 mA	-40 °C	150 °C	20 V	10 VDC	600 V	14-DIP	7.62 mm	0.3 in	Independent	6 V 9.5 V	75 ns	35 ns	Half-Bridge	Through Hole	14-DIP	2

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Half-Bridge Gate Driver IC Non-Inverting 14-DIP

Technical documentation and resources