IRS2112 Series
Manufacturer: INFINEON
IC GATE DRVR HALF-BRIDGE 16SOIC
| Part | Gate Type | Input Type | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Operating Temperature [Min] | Operating Temperature [Max] | Voltage - Supply [Max] | Voltage - Supply [Min] | High Side Voltage - Max (Bootstrap) [Max] | Package / Case | Package / Case | Package / Case | Channel Type | Logic Voltage - VIL, VIH | Rise / Fall Time (Typ) | Rise / Fall Time (Typ) | Driven Configuration | Mounting Type | Supplier Device Package | Number of Drivers |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | Non-Inverting | 600 mA | 290 mA | -40 °C | 150 °C | 20 V | 10 VDC | 600 V | 16-SOIC | 7.5 mm | 0.295 " | Independent | 6 V 9.5 V | 75 ns | 35 ns | Half-Bridge | Surface Mount | 16-SOIC | 2 |
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | Non-Inverting | 600 mA | 290 mA | -40 °C | 150 °C | 20 V | 10 VDC | 600 V | 14-DIP | 7.62 mm | 0.3 in | Independent | 6 V 9.5 V | 75 ns | 35 ns | Half-Bridge | Through Hole | 14-DIP | 2 |
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | Non-Inverting | 600 mA | 290 mA | -40 °C | 150 °C | 20 V | 10 VDC | 600 V | 16-SOIC | 7.5 mm | 0.295 " | Independent | 6 V 9.5 V | 75 ns | 35 ns | Half-Bridge | Surface Mount | 16-SOIC | 2 |
INFINEON | IGBT MOSFET (N-Channel) N-Channel MOSFET | Non-Inverting | 600 mA | 290 mA | -40 °C | 150 °C | 20 V | 10 VDC | 600 V | 14-DIP | 7.62 mm | 0.3 in | Independent | 6 V 9.5 V | 75 ns | 35 ns | Half-Bridge | Through Hole | 14-DIP | 2 |