Discrete Semiconductor Products
PSMN020-30MLCX
ActiveNexperia USA Inc.
N-CHANNEL 30 V 18.1 MΩ LOGIC LEVEL MOSFET IN LFPAK33 USING TRENCHMOS TECHNOLOGY
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Discrete Semiconductor Products
PSMN020-30MLCX
ActiveNexperia USA Inc.
N-CHANNEL 30 V 18.1 MΩ LOGIC LEVEL MOSFET IN LFPAK33 USING TRENCHMOS TECHNOLOGY
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Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN020-30MLCX |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 31.8 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 9.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 430 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Power Dissipation (Max) | 33 W |
| Rds On (Max) @ Id, Vgs | 18.1 mOhm |
| Supplier Device Package | LFPAK33 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 809 | $ 0.91 | |
| 6572 | $ 0.37 | |||
Description
General part information
PSMN020-30MLC Series
Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Documents
Technical documentation and resources