PSMN020-30MLC Series

N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology

Catalog

N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology

Part	Drain to Source Voltage (Vdss)	Technology	Power Dissipation (Max)	Vgs (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Max]	Operating Temperature [Min]
Nexperia USA Inc. PSMN020-30MLCX	30 V	MOSFET (Metal Oxide)	33 W	20 V	Surface Mount	4.5 V 10 V	9.5 nC	430 pF	LFPAK33	31.8 A	18.1 mOhm	N-Channel	175 °C	-55 °C

Catalog

N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology

Description

Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.