Discrete Semiconductor Products
FQD12P10TM-F085
ObsoleteON Semiconductor
POWER MOSFET, SINGLE P-CHANNEL, -100 V, 290 MΩ, -9.4 A
Discrete Semiconductor Products
FQD12P10TM-F085
ObsoleteON Semiconductor
POWER MOSFET, SINGLE P-CHANNEL, -100 V, 290 MΩ, -9.4 A
Technical Specifications
Parameters and characteristics for this part
| Specification | FQD12P10TM-F085 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 9.4 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 27 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 50 W, 2.5 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 290 mOhm |
| Supplier Device Package | TO-252AA |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
FQD12P10TM-F085 Series
This P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Documents
Technical documentation and resources