FQD12P10TM-F085 Series

Power MOSFET, Single P-Channel, -100 V, 290 mΩ, -9.4 A

Catalog

Power MOSFET, Single P-Channel, -100 V, 290 mΩ, -9.4 A

Part	Mounting Type	Drain to Source Voltage (Vdss)	Qualification	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Grade	Rds On (Max) @ Id, Vgs	Package / Case	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Power Dissipation (Max)
ON Semiconductor FQD12P10TM-F085	Surface Mount	100 V	AEC-Q101	27 nC	MOSFET (Metal Oxide)	10 V	800 pF	Automotive	290 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	TO-252AA	-55 °C	150 °C	30 V	P-Channel	9.4 A	4 V	2.5 W 50 W

Catalog

Power MOSFET, Single P-Channel, -100 V, 290 mΩ, -9.4 A

Key Features

• Low Gate Charge

• Improved dV/dT capability

• AECQ-101 Qualified

• RoHS compliant

Description

This P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.