STMicroelectronics-STPS5L25B-TR Rectifiers Diode Schottky 25V 5A 3-Pin(2+Tab) DPAK T/R

Discrete Semiconductor Products

STD7N52K3

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STMicroelectronics

N-CHANNEL 525 V, 0.72 OHM, 6 A, DPAK SUPERMESH3(TM) POWER MOSFET

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DocumentsSTD7N52K3 | Datasheet +16

Discrete Semiconductor Products

STD7N52K3

Active

STMicroelectronics

N-CHANNEL 525 V, 0.72 OHM, 6 A, DPAK SUPERMESH3(TM) POWER MOSFET

Deep-Dive with AI

DocumentsSTD7N52K3 | Datasheet +16

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STD7N52K3

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	525 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	34 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	737 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	90 W
Rds On (Max) @ Id, Vgs	980 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

STD7N52K3 Series

N-channel 525 V, 0.72 Ohm, 6 A, DPAK SuperMESH3(TM) Power MOSFET

Part	Technology	Vgs (Max)	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Vgs(th) (Max) @ Id
STMicroelectronics STD7N52K3	MOSFET (Metal Oxide)	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	DPAK	N-Channel	34 nC	980 mOhm	525 V	150 °C	6 A	Surface Mount	737 pF	90 W	4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	2500	$ 0.64
Digikey	N/A	0	$ 0.61

Description

General part information

STD7N52K3 Series

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.