Specification	STL120N8F7

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	60 nC
Input Capacitance (Ciss) (Max) @ Vds	4570 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	4.8 W
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	4.4 mOhm
Supplier Device Package	PowerFlat™ (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

STL120N8F7 Series

N-channel 80 V, 4.0 mOhm typ., 120 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package

Part	Technology	Power Dissipation (Max)	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	FET Type	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STL120N8F7	MOSFET (Metal Oxide)	4.8 W	140 W	PowerFlat™ (5x6)	60 nC	N-Channel	Surface Mount	20 V	80 V	175 °C	-55 °C	4 V	8-PowerVDFN	4.4 mOhm	10 V	4570 pF	120 A

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	1748	$ 1.26
Newark	Each (Supplied on Cut Tape)	1	$ 2.53
		10	$ 2.03
		25	$ 1.92
		50	$ 1.80
		100	$ 1.69
		250	$ 1.65
		500	$ 1.62
		1000	$ 1.55

Description

General part information

STL120N8F7 Series

This N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Documents

Technical documentation and resources

Product Change Notice EN

Datasheet

STL120N8F7 | Datasheet

Datasheet