Discrete Semiconductor Products

IMZC120R017M2HXKSA1

Active

INFINEON

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 97 A, 1.2 KV, 0.017 OHM, TO-247

Discrete Semiconductor Products

IMZC120R017M2HXKSA1

Active

INFINEON

SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 97 A, 1.2 KV, 0.017 OHM, TO-247

Specifications Series Pricing CAD Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IMZC120R017M2HXKSA1

Current - Continuous Drain (Id) (Tc)	97 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On)	15 V
Drive Voltage (Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Max)	89 nC
Input Capacitance (Ciss) (Max)	2910 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-4
Package Name	PG-TO247-4-17
Power Dissipation (Max)	382 W
Rds On (Max)	17 mOhm
Technology	SiCFET (Silicon Carbide)
Vgs (Max) Negative	-7 V
Vgs (Max) Positive	23 V
Vgs(th) (Max)	5.1 V

1200V G2 Series

Part	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Gate Charge (Max)	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Technology	Vgs (Max) Positive	Vgs (Max) Negative	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Rds On (Max)	Mounting Type	Power Dissipation (Max)
INFINEON IMZC120R017M2HXKSA1	2910 pF	5.1 V	89 nC	N-Channel	1200 V	TO-247-4	18 V	15 V	SiCFET (Silicon Carbide)	23 V	-7 V	97 A	-55 °C	175 °C	PG-TO247-4-17	17 mOhm	Through Hole	382 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	Tube	1	$ 20.10	<4d
		30	$ 12.56
		120	$ 10.91
		510	$ 10.43
Mouser	N/A	1	$ 18.20	30d+
		10	$ 16.03
		100	$ 13.87
		240	$ 13.42
Newark	Each	1	$ 22.36	<3d
		10	$ 20.19
		25	$ 18.02
		50	$ 15.86
		100	$ 15.42
RS Group	Special/Small Minimum Order (SSM)	1	$ 22.07	30d+
		10	$ 19.86
		100	$ 18.32

CAD

3D models and CAD resources for this part

Description

General part information

1200V G2 Series

TheCoolSiC™ MOSFET discrete1200 V, 17 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Documents

Technical documentation and resources

IMZC120R017M2HXKSA1 | Datasheet

Datasheet