IMZC120R017M2HXKSA1
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 97 A, 1.2 KV, 0.017 OHM, TO-247
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IMZC120R017M2HXKSA1
ActiveSILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 97 A, 1.2 KV, 0.017 OHM, TO-247
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Technical Specifications
Parameters and characteristics for this part
| Specification | IMZC120R017M2HXKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 97 A |
| Drain to Source Voltage (Vdss) | 1.2 kV |
| Drive Voltage (Max Rds On, Min Rds On) | 18 V, 15 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 2910 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-4 |
| Power Dissipation (Max) | 382 W |
| Rds On (Max) @ Id, Vgs | 17 mOhm |
| Supplier Device Package | PG-TO247-4-17 |
| Vgs (Max) | -7 V, 23 V |
| Vgs(th) (Max) @ Id | 5.1 V |
Pricing
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Description
General part information
1200V G2 Series
TheCoolSiC™ MOSFET discrete1200 V, 17 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
Documents
Technical documentation and resources