1200V G2 Series
Manufacturer: INFINEON
Beta
⌘K
SILICON CARBIDE MOSFET, SINGLE, N CHANNEL, 97 A, 1.2 KV, 0.017 OHM, TO-247
| Part | Input Capacitance (Ciss) (Max) | Vgs(th) (Max) | Gate Charge (Max) | FET Type | Drain to Source Voltage (Vdss) | Package / Case | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Technology | Vgs (Max) Positive | Vgs (Max) Negative | Current - Continuous Drain (Id) (Tc) | Operating Temperature (Min) | Operating Temperature (Max) | Package Name | Rds On (Max) | Mounting Type | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 2910 pF | 5.1 V | 89 nC | N-Channel | 1200 V | TO-247-4 | 18 V | 15 V | SiCFET (Silicon Carbide) | 23 V | -7 V | 97 A | -55 °C | 175 °C | PG-TO247-4-17 | 17 mOhm | Through Hole | 382 W |