Specification	PBSS5320T,215

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	540 mW
Supplier Device Package	TO-236AB
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	20 V

PBSS5320 Series

20 V, 3 A PNP low VCEsat (BISS) transistor

Part	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Power - Max [Max]	Operating Temperature	Transistor Type	Mounting Type	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Grade	Qualification
Nexperia USA Inc. PBSS5320T,215	TO-236AB	2 A	200	SC-59 SOT-23-3 TO-236-3	540 mW	150 °C	PNP	Surface Mount	300 mV	100 nA	100 MHz	20 V
Nexperia USA Inc. PBSS5320D,125	6-TSOP	3 A	150	SC-74 SOT-457	750 mW	150 °C	PNP	Surface Mount	400 mV	100 nA	100 MHz	20 V	Automotive	AEC-Q100
Nexperia USA Inc. PBSS5320X,135		3 A	150	TO-243AA	1.6 W	150 °C	PNP	Surface Mount	300 mV	100 nA	100 MHz	20 V	Automotive	AEC-Q100

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

PNP low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

Technical documentation and resources