Catalog
20 V, 3 A PNP low VCEsat (BISS) transistor
Description
AI
PNP low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
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20 V, 3 A PNP low VCEsat (BISS) transistor
20 V, 3 A PNP low VCEsat (BISS) transistor
| Part | Supplier Device Package | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Package / Case | Power - Max [Max] | Operating Temperature | Transistor Type | Mounting Type | Vce Saturation (Max) @ Ib, Ic | Current - Collector Cutoff (Max) [Max] | Frequency - Transition | Voltage - Collector Emitter Breakdown (Max) [Max] | Grade | Qualification |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | TO-236AB | 2 A | 200 | SC-59 SOT-23-3 TO-236-3 | 540 mW | 150 °C | PNP | Surface Mount | 300 mV | 100 nA | 100 MHz | 20 V | ||
 Nexperia USA Inc. | 6-TSOP | 3 A | 150 | SC-74 SOT-457 | 750 mW | 150 °C | PNP | Surface Mount | 400 mV | 100 nA | 100 MHz | 20 V | Automotive | AEC-Q100 |
 Nexperia USA Inc. | 3 A | 150 | TO-243AA | 1.6 W | 150 °C | PNP | Surface Mount | 300 mV | 100 nA | 100 MHz | 20 V | Automotive | AEC-Q100 |