Discrete Semiconductor Products

SIHP15N60E-GE3

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MOSFET N-CH 600V 15A TO220AB

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Discrete Semiconductor Products

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MOSFET N-CH 600V 15A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	SIHP15N60E-GE3

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Input Capacitance (Ciss) (Max) @ Vds	1350 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	280 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs (Max)	Package / Case	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]
Vishay General Semiconductor - Diodes Division SIHP15N80AE-GE3	N-Channel	Through Hole	350 mOhm	30 V	TO-220-3	4 V	1093 pF	MOSFET (Metal Oxide)	13 A	156 W	10 V	800 V	-55 °C	150 °C	53 nC	TO-220AB
Vishay General Semiconductor - Diodes Division SIHP15N60E-E3	N-Channel	Through Hole	280 mOhm	30 V	TO-220-3	4 V	1350 pF	MOSFET (Metal Oxide)	15 A	180 W	10 V	600 V	-55 °C	150 °C		TO-220AB	78 nC
Vishay General Semiconductor - Diodes Division SIHP15N65E-GE3	N-Channel	Through Hole	280 mOhm	30 V	TO-220-3	4 V		MOSFET (Metal Oxide)	15 A	34 W	10 V	650 V	-55 °C	150 °C		TO-220AB	96 nC	1640 pF
Vishay General Semiconductor - Diodes Division SIHP15N50E-GE3	N-Channel	Through Hole	280 mOhm	30 V	TO-220-3	4 V	1162 pF	MOSFET (Metal Oxide)	14.5 A	156 W	10 V	500 V	-55 °C	150 °C	66 nC	TO-220AB
Vishay General Semiconductor - Diodes Division SIHP15N60E-GE3	N-Channel	Through Hole	280 mOhm	30 V	TO-220-3	4 V	1350 pF	MOSFET (Metal Oxide)	15 A	180 W	10 V	600 V	-55 °C	150 °C		TO-220AB	78 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 600 V 15A (Tc) 180W (Tc) Through Hole TO-220AB

Technical documentation and resources