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MOSFET N-CH 800V 13A TO220AB

PartFET TypeMounting TypeRds On (Max) @ Id, VgsVgs (Max)Package / CaseVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsTechnologyCurrent - Continuous Drain (Id) @ 25°CPower Dissipation (Max)Drive Voltage (Max Rds On, Min Rds On)Drain to Source Voltage (Vdss)Operating Temperature [Min]Operating Temperature [Max]Gate Charge (Qg) (Max) @ VgsSupplier Device PackageGate Charge (Qg) (Max) @ Vgs [Max]Input Capacitance (Ciss) (Max) @ Vds [Max]
TO-220AB
Vishay General Semiconductor - Diodes Division
SIHP15N80AE-GE3
N-Channel
Through Hole
350 mOhm
30 V
TO-220-3
4 V
1093 pF
MOSFET (Metal Oxide)
13 A
156 W
10 V
800 V
-55 °C
150 °C
53 nC
TO-220AB
TO-220AB
Vishay General Semiconductor - Diodes Division
SIHP15N60E-E3
N-Channel
Through Hole
280 mOhm
30 V
TO-220-3
4 V
1350 pF
MOSFET (Metal Oxide)
15 A
180 W
10 V
600 V
-55 °C
150 °C
TO-220AB
78 nC
TO-220AB
Vishay General Semiconductor - Diodes Division
SIHP15N65E-GE3
N-Channel
Through Hole
280 mOhm
30 V
TO-220-3
4 V
MOSFET (Metal Oxide)
15 A
34 W
10 V
650 V
-55 °C
150 °C
TO-220AB
96 nC
1640 pF
TO-220AB
Vishay General Semiconductor - Diodes Division
SIHP15N50E-GE3
N-Channel
Through Hole
280 mOhm
30 V
TO-220-3
4 V
1162 pF
MOSFET (Metal Oxide)
14.5 A
156 W
10 V
500 V
-55 °C
150 °C
66 nC
TO-220AB
TO-220AB
Vishay General Semiconductor - Diodes Division
SIHP15N60E-GE3
N-Channel
Through Hole
280 mOhm
30 V
TO-220-3
4 V
1350 pF
MOSFET (Metal Oxide)
15 A
180 W
10 V
600 V
-55 °C
150 °C
TO-220AB
78 nC