Discrete Semiconductor Products

SQ2310ES-T1_BE3

Obsolete

MOSFET N-CH 20V 6A SOT23-3

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 20V 6A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	SQ2310ES-T1_BE3

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8.5 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	485 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	30 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

Part	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Technology	Vgs(th) (Max) @ Id	Qualification	Grade
Vishay General Semiconductor - Diodes Division SQ2310ES-T1_GE3	Surface Mount	N-Channel	1.5 V 4.5 V	20 V	8.5 nC	8 V	-55 °C	175 ░C	SC-59 SOT-23-3 TO-236-3	6 A	SOT-23-3 (TO-236)	485 pF	30 mOhm	2 W	MOSFET (Metal Oxide)	1 V
Vishay General Semiconductor - Diodes Division SQ2310ES-T1_BE3	Surface Mount	N-Channel	1.5 V 4.5 V	20 V	8.5 nC	8 V	-55 °C	175 ░C	SC-59 SOT-23-3 TO-236-3	6 A	SOT-23-3 (TO-236)	485 pF	30 mOhm	2 W	MOSFET (Metal Oxide)	1 V	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 20 V 6A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources