Discrete Semiconductor Products

GAN3R2-100CBEAZ

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100 V, 3.2 MOHM GALLIUM NITRIDE

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Discrete Semiconductor Products

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100 V, 3.2 MOHM GALLIUM NITRIDE

Technical Specifications

Parameters and characteristics for this part

Specification	GAN3R2-100CBEAZ

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	12 nC
Input Capacitance (Ciss) (Max) @ Vds	1000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-XFBGA, WLCSP
Power Dissipation (Max) [Max]	394 W
Rds On (Max) @ Id, Vgs	3.2 mOhm
Supplier Device Package	8-WLCSP
Supplier Device Package [x]	3.5
Supplier Device Package [y]	2.13
Technology	GaNFET (Gallium Nitride)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-4 V
Vgs(th) (Max) @ Id	2.5 V

Part	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type
Freescale Semiconductor - NXP GAN3R2-100CBEAZ	8-XFBGA WLCSP	100 V	2.5 V	12 nC	6 V	-4 V	8-WLCSP	2.13	3.5	1000 pF	GaNFET (Gallium Nitride)	394 W	3.2 mOhm	150 °C	-40 °C	60 A	Surface Mount	5 V	N-Channel

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General part information

N-Channel 100 V 60A 394W Surface Mount 8-WLCSP (3.5x2.13)

Technical documentation and resources