GAN3R2 Series

Catalog

100 V, 3.2 MOHM GALLIUM NITRIDE

Part	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type
Freescale Semiconductor - NXP GAN3R2-100CBEAZ	8-XFBGA WLCSP	100 V	2.5 V	12 nC	6 V	-4 V	8-WLCSP	2.13	3.5	1000 pF	GaNFET (Gallium Nitride)	394 W	3.2 mOhm	150 °C	-40 °C	60 A	Surface Mount	5 V	N-Channel