Discrete Semiconductor Products

SIJ470DP-T1-GE3

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MOSFET N-CH 100V 58.8A PPAK SO-8

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Discrete Semiconductor Products

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MOSFET N-CH 100V 58.8A PPAK SO-8

Technical Specifications

Parameters and characteristics for this part

Specification	SIJ470DP-T1-GE3

Current - Continuous Drain (Id) @ 25°C	58.8 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	56 nC
Input Capacitance (Ciss) (Max) @ Vds	2050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® SO-8
Power Dissipation (Max)	56.8 W, 5 W
Rds On (Max) @ Id, Vgs	9.1 mOhm
Supplier Device Package	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Mounting Type	Power Dissipation (Max)	Supplier Device Package	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Vishay General Semiconductor - Diodes Division SIJ470DP-T1-GE3	N-Channel	56 nC	10 V	7.5 V	3.5 V	58.8 A	-55 °C	150 °C	PowerPAK® SO-8	Surface Mount	5 W 56.8 W	PowerPAK® SO-8	100 V	9.1 mOhm	MOSFET (Metal Oxide)	2050 pF	20 V

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General part information

N-Channel 100 V 58.8A (Tc) 5W (Ta), 56.8W (Tc) Surface Mount PowerPAK® SO-8

Technical documentation and resources