SIJ470 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 100V 58.8A PPAK SO-8
| Part | FET Type | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Mounting Type | Power Dissipation (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Technology | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | N-Channel | 56 nC | 10 V | 7.5 V | 3.5 V | 58.8 A | -55 °C | 150 °C | PowerPAK® SO-8 | Surface Mount | 5 W 56.8 W | PowerPAK® SO-8 | 100 V | 9.1 mOhm | MOSFET (Metal Oxide) | 2050 pF | 20 V |