STP24NM60N
ActivePOWER MOSFET, N CHANNEL, 17 A, 600 V, 0.168 OHM, 10 V, 3 V ROHS COMPLIANT: YES
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STP24NM60N
ActivePOWER MOSFET, N CHANNEL, 17 A, 600 V, 0.168 OHM, 10 V, 3 V ROHS COMPLIANT: YES
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STP24NM60N |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 17 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 46 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 |
| Power Dissipation (Max) | 125 W |
| Rds On (Max) @ Id, Vgs | 190 mOhm |
| Supplier Device Package | TO-220 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
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Description
General part information
STP24NM60N Series
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Documents
Technical documentation and resources