Discrete Semiconductor Products
STH320N4F6-6
ActiveSTMicroelectronics
N-CHANNEL 40 V, 1.1 MOHM TYP., 200 A STRIPFET F6 POWER MOSFET IN H2PAK-6 PACKAGE
Discrete Semiconductor Products
STH320N4F6-6
ActiveSTMicroelectronics
N-CHANNEL 40 V, 1.1 MOHM TYP., 200 A STRIPFET F6 POWER MOSFET IN H2PAK-6 PACKAGE
Technical Specifications
Parameters and characteristics for this part
| Specification | STH320N4F6-6 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 200 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 240 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 13800 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-263-7, D2PAK (6 Leads + Tab) |
| Power Dissipation (Max) | 300 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs [Max] | 1.3 mOhm |
| Supplier Device Package | H2PAK-6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STH320N4F6-6 Series
These devices are N-channel Power MOSFETs developed using the 6thgeneration of STripFET DeepGATE technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on)in all packages.Standard threshold drive100% avalanche tested
Documents
Technical documentation and resources