Zenode.ai Logo
Beta
STB6NK60ZT4
Discrete Semiconductor Products

STB6NK60ZT4

NRND
STMicroelectronics

N-CHANNEL 600 V - 1 OHM - 6 A - D2PAK ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

STB6NK60ZT4
Discrete Semiconductor Products

STB6NK60ZT4

NRND
STMicroelectronics

N-CHANNEL 600 V - 1 OHM - 6 A - D2PAK ZENER-PROTECTED SUPERMESH(TM) POWER MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB6NK60ZT4
Current - Continuous Drain (Id) @ 25°C6 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]46 nC
Input Capacitance (Ciss) (Max) @ Vds905 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)110 W
Rds On (Max) @ Id, Vgs1.2 Ohm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 889$ 2.58
NewarkEach (Supplied on Cut Tape) 1$ 2.66
1$ 2.66
10$ 2.00
10$ 2.00
25$ 1.85
25$ 1.85
50$ 1.69
50$ 1.69
100$ 1.53
100$ 1.53
250$ 1.48
250$ 1.48
500$ 1.42
500$ 1.42

Description

General part information

STB6NK60Z Series

The SuperMESH™series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Documents

Technical documentation and resources